Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga2O3) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN heterostructured-metal-oxide-semiconductors (MOSHEMTs). The double-channel was constructed by the polarized Al0.18Ga0.82N/GaN channel 1 and band discontinued lattice-matched Al0.83In0.17N/GaN channel 2. Because of the superior gate control capability, the generally induced double-hump transconductance characteristics of double-channel MOSHEMTs were not obtained in the devices. The superior gate control capability was contributed by the side-wall electrical field modulation in the fin-channel. Owing to the high-insulating Ga2O3 gate oxide layer and the high-quality interface between the Ga2O3 and GaN layers, low noise power density of 8.7 x 10(-14) Hz(-1) and low Hooge's coefficient of 6.25 x 10(-6) of flicker noise were obtained. Furthermore, the devices had a unit gain cutoff frequency of 6.5 GHz and a maximal oscillation frequency of 12.6 GHz.