Studies on the Bi/Si(100)-(2x1) interface

被引：7
|
作者：
Bannani, A. [1 ]
Bobisch, C. A. [1 ]
Moeller, R. [1 ]
机构：
[1] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen, Dept Phys, D-47048 Duisburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期
关键词：
D O I：
10.1063/1.2963031
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial Bi(111) films on the Si(100)-(2 x 1) surface were studied by two different scanning probe techniques, to obtain information on the buried interface. Ballistic electron emission microscopy reveals that the transmission across the Schottky barrier depends on the type of substrate terrace. The thermovoltage in scanning tunneling microscopy exhibits alternating signals for substrate step edges, which can be related to S-A and S-B steps, characteristic for the uncovered Si(100)-(2 x 1) surface. In addition to information about the growth mode of Bi, it was found that typical features of the Si(100)-(2 x 1) surface reconstruction are maintained.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] THE GADOLINIUM-SI(100)2X1 INTERFACE
    HENLE, WA
    RAMSEY, MG
    NETZER, FP
    WITZEL, S
    BRAUN, W
    SURFACE SCIENCE, 1991, 243 (1-3) : 141 - 150
  • [2] Photoemission study of the Sm/Si(100)2x1 interface
    Xu, SH
    Lu, ED
    Yu, XJ
    Pan, HB
    Zhang, FP
    Xu, PS
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 80 : 189 - 192
  • [3] OXIDATION OF SI(100)2X1 AND GEXSI1-X(100)2X1
    SCHAEFER, JA
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1987, 44 : 163 - 174
  • [4] FREEZING OF THE 2X1 STRUCTURE AT COMMENSURATE AG(100)-SI(100) INTERFACE
    KIMURA, Y
    TAKAYANAGI, K
    SURFACE SCIENCE, 1992, 276 (1-3) : 166 - 173
  • [5] CHARGE-TRANSFER ACROSS THE AS/SI(100)-2X1 INTERFACE
    EVANS, JA
    LAINE, AD
    WEIGHTMAN, P
    MATTHEW, JAD
    WOOLF, DA
    WESTWOOD, DI
    WILLIAMS, RH
    PHYSICAL REVIEW B, 1992, 46 (03): : 1513 - 1520
  • [6] THE BA/SI(100)-2X1 INTERFACE .1. XPS AND XAES STUDIES OF SILICIDE FORMATION
    WEIJS, PJW
    FUGGLE, JC
    VANDERHEIDE, PAM
    SURFACE SCIENCE, 1992, 260 (1-3) : 97 - 101
  • [7] Photoemission studies of the surface reactivity of thiophene on Si(100)-(2x1), Si(111)-(7x7) and Ge(100)-(2x1)
    Rousseau, GBD
    Dhanak, V
    Kadodwala, M
    SURFACE SCIENCE, 2001, 494 (03) : 251 - 264
  • [8] Interaction of Lewis Acids with Si(100)-2x1 and Ge(100)-2x1 Surfaces
    Ferguson, Glen Allen
    Das, Ujjal
    Raghavachari, Krishnan
    JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (23): : 10146 - 10150
  • [9] Study of the electronic structure of Si(100)2x1 and Cs/Si(100)2x1 with MIES and UPS (HeI)
    Gunster, J
    Mayer, T
    Kempter, V
    SURFACE SCIENCE, 1996, 359 (1-3) : 155 - 162
  • [10] Comparative study of the structural and electronic properties of the surface Si(100)(2x1)-Sb and Si(100)(2x1)-As
    Gonzalez-Mendez, ME
    de la Garza, L
    Takeuchi, N
    REVISTA MEXICANA DE FISICA, 1998, 44 (04) : 381 - 384
12345