Study of photoluminescence and deep-level defects in Be-doped InGaAsN

被引：0
|
作者：
Xie, SY [1 ]
Yoon, SF [1 ]
Wang, SZ [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
2005 International Conference on Indium Phosphide and Related Materials | 2005年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have investigated the temperature-dependent photoluminescence and deep-level defects in Be-dope, p-type In0.03Ga0.97As0.99N0.01 grown by radio frequency plasma-assisted solid source molecular beam epitaxy.
引用
收藏
页码：416 / 418
页数：3
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