Intra- and inter-band transitions in HgSe in megagauss fields

被引：8
|
作者：
Stolpe, I
Portugall, O
Puhlmann, N
Mueller, HU
von Ortenberg, M
von Truchsess, M
Becker, CR
Pfeuffer-Jeschke, A
Landwehr, G
机构：
[1] Humboldt Univ, Inst Phys, D-10115 Berlin, Germany
[2] Univ Wurzburg, Inst Phys, EP 3, D-97074 Wurzburg, Germany
来源：
PHYSICA B | 2001年 / 294卷
关键词：
megagauss fields; spin-dynamics; magnetooptics; narrow-gap semiconductors; spin-lattice relaxation;
D O I：
10.1016/S0921-4526(00)00699-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
IR-megagauss spectroscopy on HgSe provides information on both intra- and inter-band transitions resulting in a new set of k*p-parameters for high magnetic field application. Transient effects in the resonance intensities are due to hysteresis effects in the spin dependent population and provide a novel tool for the determination of the spin-lattice relaxation. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：459 / 462
页数：4
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