On-Chip ESD Protection Designs with SCR-Based Devices in RF Integrated Circuits

被引：0
|
作者：
Lin, Chun-Yu [1 ]
Chang, Rong-Kun [1 ]
机构：
[1] Natl Taiwan Normal Univ, Taipei, Taiwan
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS - TAIWAN (ICCE-TW) | 2014年
关键词：
CMOS; GHZ;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CMOS technology has been used to implement the radio-frequency (RF) integrated circuits for consumer electronics. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with silicon-controlled rectifier (SCR) devices in RF integrated circuits is presented in this paper.
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页数：2
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