Spreading-resistance temperature sensor on silicon-on-insulator

被引：24
|
作者：
Lai, PT [1 ]
Li, B [1 ]
Chan, CL [1 ]
Sin, JKO [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 11期
关键词：
D O I：
10.1109/55.798053
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A spreading-resistance temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) substrate and achieves promising characteristics as compared with similar SRT sensor on hulk silicon wafer. Moreover, experimental results show that the maximum operating temperature of thin-film (1.2 mu m) SOI SRT sensor can reach 450 degrees C, much higher than 350 degrees C of thick-film (10 mu m) SOI SRT sensor under the same current level, With complete oxide isolation, this sensor structure can be potentially used in low-power integrated sensors operating at temperatures as high as 450 degrees C.
引用
收藏
页码：589 / 591
页数：3
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