Fabrication of diamond/SiC composites by Si-vapor vacuum reactive infiltration

Diamond/SiC composites were fabricated by a rapid gaseous Si vacuum reactive infiltration of porous carbon-containing diamond preforms at 1600 degrees C for 1 h. The obtained composites consisted of diamond, beta-SiC and a small fraction of residual unreacted Si; nearly fully dense composites were achieved. Graphitization of diamond did not occur during the infiltration at 1600 degrees C under vacuum. The transgranular fracture mode of diamond crystals and the perfect interface between diamond and SiC suggested a strong interfacial bonding strength. Relatively-low coefficient of thermal expansion (3.6 x 10(-6)/K, 50-400 degrees C) and high thermal conductivity (562 W/m K) of diamond/SiC composites showed great potential for thermal management applications. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.