X-band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

被引：0
|
作者：
Janssen, J. P. B. [1 ]
van Heijningen, M. [1 ]
Provenzano, G. [1 ]
Visser, G. C. [1 ]
Morvan, E. [2 ]
van Vliet, F. E. [1 ]
机构：
[1] TNO Def Secur & Safety, Oude Waalsdorperweg 63, NL-2597 AK The Hague, Netherlands
[2] Alcatel Thales III V Lab, F-91460 Marcoussis, France
来源：
2008 IEEE CSIC SYMPOSIUM | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.
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页码：72 / +
页数：2
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