ZnO Nano-arrays on High Power Blue LED Chip for Enhanced Light Extraction Efficiency

被引:0
|
作者
Xu Bing [1 ]
Zhao Jun-Liang [1 ]
Zhang Jian-Ming [1 ]
Sun Xiao-Wei [1 ]
Zhuge Fu-Wei [2 ]
Li Xiao-Min [2 ]
机构
[1] Tianjin Univ, Sch Sci, Dept Appl Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO nano-arrays; high power LED chip; light extraction efficiency; chemical solution method;
D O I
10.3724/SP.J.1077.2012.11499
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZnO nano-arrays were grown on high power GaN blue LED chip by low-cost chemical solution methods, which aimed to enhance the light extraction efficiency of LED chip. Various morphology was achieved by adjusting the concentration of ammonia and Zn2+ in the growth solution. With different growth solution, ZnO nano-arrays exhibited different morphologies and densities. The effect of nano-array morphology on the light extraction performance of the ZnO nano-array coated LED chip were studied. The mechanism of light extraction efficiency enhancement by nano-arrays was also discussed based on the experimental results. The result shows that ZnO nano-arrays with higher density and cone-shaped morphology are favorable for the improvement of light extraction in LED chip. ZnO nano-arrays grown at the optimum conditions can enhance the light extraction of LED chip by more than 60%. Meanwhile, ZnO nano-arrays have no significant effect on the electrical properties and electroluminescence stability of LED chip.
引用
收藏
页码:716 / 720
页数:5
相关论文
共 12 条
  • [1] Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays
    An, Sung Jin
    Chae, Jee Hae
    Yi, Gyu-Chul
    Park, Gil H.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (12)
  • [2] Chiu C H, 2008, ELECTROCHEM SOLID ST, V11, P84
  • [3] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
    Fujii, T
    Gao, Y
    Sharma, R
    Hu, EL
    DenBaars, SP
    Nakamura, S
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (06) : 855 - 857
  • [4] Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution
    Kim, Kyoung-Kook
    Lee, Sam-dong
    Kim, Hyunsoo
    Park, Jae-Chul
    Lee, Sung-Nam
    Park, Youngsoo
    Park, Seong-Ju
    Kim, Sang-Woo
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (07)
  • [5] KUO CH, 2006, APPL PHYS LETT, V89
  • [6] Kwon M K, 2008, APPL PHYS LETT, V92
  • [7] Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
    McGroddy, K.
    David, A.
    Matioli, E.
    Iza, M.
    Nakamura, S.
    DenBaars, S.
    Speck, J. S.
    Weisbuch, C.
    Hu, E. L.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (10)
  • [8] Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
    Nishida, T
    Saito, H
    Kobayashi, N
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (25) : 3927 - 3928
  • [9] Research challenges to ultra-efficient inorganic solid-state lighting
    Phillips, Julia M.
    Coltrin, Michael E.
    Crawford, Mary H.
    Fischer, Arthur J.
    Krames, Michael R.
    Mueller-Mach, Regina
    Mueller, Gerd O.
    Ohno, Yoshi
    Rohwer, Lauren E. S.
    Simmons, Jerry A.
    Tsao, Jeffrey Y.
    [J]. LASER & PHOTONICS REVIEWS, 2007, 1 (04) : 307 - 333
  • [10] Highly stable resistive switching on monocrystalline ZnO
    Shih, Andy
    Zhou, Wendi
    Qiu, Julia
    Yang, Han-Jen
    Chen, Shuyi
    Mi, Zetian
    Shih, Ishiang
    [J]. NANOTECHNOLOGY, 2010, 21 (12)