Integrated 1.55μm and 1.3μm DFB laser-electro absorption modulators with identical active layer structure composed of two QW types

被引：0
|
作者：
Stegmueller, B [1 ]
Gessner, R [1 ]
Kunkel, F [1 ]
Rieger, J [1 ]
Schier, M [1 ]
Walter, J [1 ]
Baur, E [1 ]
机构：
[1] Infineon Technol AG, Corp Res Photon, D-81739 Munich, Germany
来源：
COMMAD 2000 PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/COMMAD.2000.1022881
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the improved performance of a monolithically integrated 1.55mum ridge waveguide DFB laserdiode with an electro absorption modulator using the identical active multiple quantum layer structure composed of two different quantum well types. For the first time, this approach was successfully transferred to devices operating at 1.3mum. Minimum threshold currents of 20mA and 17mA are obtained for 1.55mum and 1.3mum devices, respectively. With a voltage swing of 1.5V, we achieve an extinction ratio greater than or equal to10dB and the 3-dBe cutoff frequency of 200mum long modulators exceeds 15GHz.
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页码：9 / 12
页数：4
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