Silver metallization for advanced interconnects

被引：98
|
作者：
Manepalli, R [1 ]
Stepaniak, F [1 ]
Bidstrup-Allen, SA [1 ]
Kohl, PA [1 ]
机构：
[1] Georgia Inst Technol, Sch Chem Engn, Atlanta, GA 30332 USA
来源：
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 1999年 / 22卷 / 01期
关键词：
corrosion; 85/85; tests; electrochemical migration; low resistivity; residual stress; silver dendrites; silver metallization; temperature humidity and bias (THB) test;
D O I：
10.1109/6040.746536
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silver metal has the highest room-temperature electrical conductivity of any substance; however, it has found limited acceptance in the electronic industry (e.g., silver filled epoxy) due to the high rate of metal corrosion and migration causing dendrites and electrical failures. With decreasing transistor feature sizes, device-operating voltages have scaled down considerably. In this paper, the reliability of silver-and potential benefits: of silver metallization are:discussed in terms of future trends in microelectronic interconnections, Experimental data supports existing reliability models indicating that electrochemical migration failure modes may not be operative at low voltages. Silver metal corrosion and migration are studied under accelerated test conditions to obtain a qualitative understanding of the failure mechanism.
引用
收藏
页码：4 / 8
页数：5
相关论文
共 50 条
  • [1] High conductivity silver metallization for advanced interconnects
    Manepalli, R
    Kohl, PA
    Bidstrup-Allen, SA
    INTERCONNECT AND CONTACT METALLIZATION, 1998, 97 (31): : 211 - 217
  • [2] Ruthenium Metallization for Advanced Interconnects
    Wen, Liang Gong
    Adelmann, Christoph
    Pedreira, Olalla Varela
    Dutta, Shibesh
    Popovici, Mihaela
    Briggs, Basoene
    Heylen, Nancy
    Vanstreels, Kris
    Wilson, Christopher J.
    Van Elshocht, Sven
    Croes, Kristof
    Bommels, Juergen
    Tokei, Zsolt
    2016 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC), 2016, : 34 - 36
  • [3] ADVANCED COPPER METALLIZATION TECHNOLOGY FOR ULSI INTERCONNECTS
    OHMI, T
    TSUBOUCHI, K
    SOLID STATE TECHNOLOGY, 1992, 35 (04) : 47 - 52
  • [4] A NEW METALLIZATION TECHNOLOGY FOR ADVANCED INTERCONNECTS ON SUBSTRATES
    NGUYEN, PH
    BACHNER, FJ
    IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1987, 10 (04): : 571 - 576
  • [5] Copper metallization for advanced interconnects:: the electrochemical revolution
    Haumesser, PH
    Cordeau, A
    Maîtrejean, S
    Mourier, T
    Gosset, LG
    Besling, WFA
    Passemard, G
    Torres, J
    PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2004, : 3 - 5
  • [6] Evaluation of Metallization Options for Advanced Cu Interconnects Application
    Jourdan, N.
    Carbonell, L.
    Heylen, N.
    Swerts, J.
    Armini, S.
    Caro, A. Maestre
    Demuynck, S.
    Croes, K.
    Beyer, G.
    Tokei, Z.
    Van Elshocht, S.
    Vancoille, E.
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 515 - 521
  • [7] Advanced silver metallization for ULSI applications
    Alford, Terry L.
    1998, IEEE, Piscataway, NJ, United States
  • [8] Advanced silver metallization for ULSI applications
    Alford, TL
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 202 - 205
  • [9] Copper metallization of advanced interconnects:: Strategies for beyond 65 nm
    Roule, A
    Morel, T
    Haumesser, PH
    Pollet, O
    Cordeau, M
    Maîtrejean, S
    Klocke, J
    Ritzdorf, T
    Passemard, G
    ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), 2004, : 341 - 346
  • [10] Silver metal organic chemical vapor deposition for advanced silver metallization
    Gao, L
    Härter, P
    Linsmeier, C
    Wiltner, A
    Emling, R
    Schmitt-Landsiedel, D
    MICROELECTRONIC ENGINEERING, 2005, 82 (3-4) : 296 - 300
12345