A Review of Materials Issues and Degradation of III-V Compound Semiconductors and Optical Devices

被引：0

作者：

Ueda, O. ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Minato Ku, Tokyo 1050002, Japan

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52) | 2010年 / 33卷 / 13期

关键词：

LIGHT-EMITTING-DIODES; DOUBLE-HETEROSTRUCTURE LASERS; DARK-SPOT DEFECTS; MOLECULAR-BEAM EPITAXY; ELECTRON-MICROSCOPIC OBSERVATION; CHEMICAL VAPOR-DEPOSITION; LIQUID-PHASE EPITAXY; CATASTROPHIC DEGRADATION; MODULATED STRUCTURES; DISLOCATION CLIMB;

D O I：

10.1149/1.3485609

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Materials issues in III-V alloy semiconductors and our current understanding of degradation mechanism in III-V compound semiconductors and optical devices are systematically reviewed. Generation of defects and thermal instability are among these issues for these systems. In each phenomenon, generation mechanism of defects and structure are clarified. Three major degradation modes of optical devices, rapid degradation, gradual degradation, and catastrophic failure are briefly summarized, and the rapid and the gradual degradation modes are discussed in more detail.

引用

页码：73 / 92

页数：20

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