Quantum-dot cascade laser: Proposal for an ultralow-threshold semiconductor laser

被引：68

作者：

Wingreen, NS ^{[1
]}

Stafford, CA ^{[1
]}

机构：

[1] UNIV GENEVA,DEPT PHYS THEOR,CH-1211 GENEVA 4,SWITZERLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 07期

关键词：

CW lasers; proposals; quantum-well lasers; semiconductor lasers; submillimeter wave lasers;

D O I：

10.1109/3.594880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a quantum-dot version of the quantum-well cascade laser of Faist et al. The elimination of single phonon decays by the three-dimensional confinement implies a several order-of-magnitude reduction in the threshold current. The requirements on dot size (10-20 nm) and on dot density and uniformity [one coupled pair of dots per (200 nm) with 5% nonuniformity] are close to current technology.

引用

页码：1170 / 1173

页数：4

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