Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

被引：57
|
作者：
Schwarz, C. [1 ]
Yadav, A. [1 ]
Shatkhin, M. [1 ]
Flitsiyan, E. [1 ]
Chernyak, L. [1 ]
Kasiyan, V. [2 ]
Liu, L. [3 ]
Xi, Y. Y. [3 ]
Ren, F. [3 ]
Pearton, S. J. [4 ]
Lo, C. F. [5 ]
Johnson, J. W. [5 ]
Danilova, E. [6 ]
机构：
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[2] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[5] Kopin Corp, Taunton, MA 02780 USA
[6] Inst Nucl Phys, Tashkent 100214, Uzbekistan
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期
基金：
美国国家科学基金会;
关键词：
GALLIUM NITRIDE; SEMICONDUCTORS; HARDNESS; GAN; DC;
D O I：
10.1063/1.4792240
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlGaN/GaN high electron mobility transistors were irradiated with Co-60 gamma-rays to doses up to 1000 Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature-dependent electron beam-induced current measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energies related to radiation-induced defects due to nitrogen vacancies. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate, and drain characteristics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792240]
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页数：3
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