Molecular dynamics simulation of Ni/Cu epitaxial thin film growth

被引：0
|
作者：
Liu, ZhiQiang [1 ,2 ]
Li, Jie [1 ,2 ]
Zhou, NaiGen [1 ]
Wei, JianNing [2 ]
机构：
[1] Nanchang Univ, Sch Mat Sci & Engn, Nanchang, Peoples R China
[2] Jiujiang Univ, Sch Sci, Jiujiang, Peoples R China
来源：
KEY ENGINEERING MATERIALS AND COMPUTER SCIENCE | 2011年 / 320卷
关键词：
Molecular dynamics; heteroepitaxy; thin film; simulation; MISFIT DISLOCATIONS; NUCLEATION;
D O I：
10.4028/www.scientific.net/AMR.320.373
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the growth process of Ni deposited on the Cu(1 (1) over bar(1) over bar )surface at 300K and 700K was simulated by molecular dynamics. The impact of the substrate temperature on the growth pattern and structure of thin film was investigated. The simulation results show that, at the higher substrate temperature, the surface of thin film is smoother and the growth pattern of thin film is two-dimensional layer, however, at the lower temperature, the growth mode of thin film is three-dimensional island.
引用
收藏
页码：373 / +
页数：2
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