A study of atypical grain growth properties for SnO2 thin films

被引：13
|
作者：
Min, Soon [1 ]
Jeong, Jin [2 ]
机构：
[1] Chosun Nursing Coll, Dept Phys, Gwanju 501825, South Korea
[2] Chosun Univ, Dept Phys, Kwangju 501759, South Korea
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 05期
关键词：
Thin films; SnO2; Atypical grain; Grain growth; TIN OXIDE;
D O I：
10.1016/j.mssp.2013.01.026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SnO2 thin films were grown on Si substrate using the chemical vapor deposition(CVD) method. The surface of the thin film was examined using a transmission electron microscope (TEM) and a scanning electron microscope (SEM). Atypical shaped grains and atypical columnar structures were observed on the SnO2 thin films that were exposed to air after first deposition and during re-deposition in anaerobic conditions in the CVD. The electrical properties of SnO2 thin films feature a lower range of resistance in single mode, but after the atypical particles appear, the electrical resistance decreased. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1267 / 1270
页数：4
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