Phase selection and microstructure formation in undercooled Co-61.8 at.% Si melts under various containerless processing conditions

被引:25
|
作者
Zhang, Y. K. [1 ,2 ]
Gao, J. [1 ]
Kolbe, M. [2 ]
Klein, S. [2 ]
Yang, C. [1 ]
Yasuda, H. [3 ]
Herlach, D. M. [2 ]
Gandin, Ch. -A. [4 ]
机构
[1] Northeastern Univ, Key Lab Electromagnet Proc Mat, Minist Educ, Shenyang 110004, Peoples R China
[2] Deutsch Zentrum Luft & Raumfahrt DLR, Inst Mat Phys Weltraum, D-51170 Cologne, Germany
[3] Osaka Univ, Dept Adapt Syst, Osaka 5650781, Japan
[4] MINES Paris Tech, CEMEF, CNRS, UMR 7635, F-06904 Sophia Antipolis, France
基金
美国国家科学基金会;
关键词
CoSi-CoSi2; eutectic; Undercooling; Nucleation; Microstructure; Convection; HIGH-TEMPERATURE OXIDATION; STATIC MAGNETIC-FIELDS; EUTECTIC SOLIDIFICATION; COMPOSITE COATINGS; ALLOYS; GROWTH; NUCLEATION; LEVITATION; KINETICS; DROPLETS;
D O I
10.1016/j.actamat.2013.04.061
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The hypoeutectic composition Co-61.8 at.% Si was undercooled and solidified using electromagnetic levitation, electromagnetic levitation under a static magnetic field, electrostatic levitation and glass-fluxing. The samples generally showed two thermal events, either separated or continuous depending on undercooling. In situ monitoring of the two thermal events with a high-speed camera revealed a sudden decrease of dendritic growth velocities of primary phases at a critical undercooling of 88 K. Scanning electron microscopy studies of the solidified samples showed that the CoSi compound and the CoSi2 compound nucleate as the primary phase for low and high undercoolings, respectively. The microstructure of the samples depends not only on undercooling, but also on the onset temperature or delay time of the second thermal event. Melt convection has no effect on the primary phase selection in undercooled melts, but it has a significant effect on the delay time and therefore on microstructure formation of the samples for high undercoolings. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:4861 / 4873
页数:13
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