Development of microcrystalline silicon active matrix for OLED displays

被引：0
|
作者：
Gaillard, A [1 ]
Mohammed-Brahim, T [1 ]
Rogel, R [1 ]
Crand, S [1 ]
Prat, C [1 ]
Leroy, P [1 ]
机构：
[1] Univ Rennes 1, IETR, Grp Microelect, Rennes, France
来源：
2005 PhD Research in Microelectronics and Electronics, Vols 1 and 2, Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report an active matrix back-plane integrating for the first time high-temperature microcrystalline silicon thin-film transistors (mu c-Si TFT) dedicated to the emerging organic light emitting diodes (OLED) display technology. Resulting from our silicon deposition technique, significant improvement of the pixel to pixel uniformity is obtained by combining both conventional pixel design and simple technological process.
引用
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页码：339 / 342
页数：4
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