Detection of a Large Valley-Orbit Splitting in Silicon with Two-Donor Spectroscopy

被引:48
|
作者
Roche, B. [1 ]
Dupont-Ferrier, E. [1 ]
Voisin, B. [1 ]
Cobian, M. [2 ]
Jehl, X. [1 ]
Wacquez, R. [1 ,3 ]
Vinet, M. [3 ]
Niquet, Y-M [2 ]
Sanquer, M. [1 ]
机构
[1] UJF Grenoble 1, SPSMS, UMR E CEA, INAC, F-38054 Grenoble, France
[2] UJF Grenoble 1, SPMM, UMR E CEA, INAC, F-38054 Grenoble, France
[3] CEA, LETI, F-38054 Grenoble, France
关键词
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I
10.1103/PhysRevLett.108.206812
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nano-structures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO2 interface and electric field in the wire show that the values found are consistent with the device geometry.
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页数:5
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