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A two-qubit logic gate in silicon
被引:708
|作者:
Veldhorst, M.
[1
]
Yang, C. H.
[1
]
Hwang, J. C. C.
[1
]
Huang, W.
[1
]
Dehollain, J. P.
[1
]
Muhonen, J. T.
[1
]
Simmons, S.
[1
]
Laucht, A.
[1
]
Hudson, F. E.
[1
]
Itoh, K. M.
[2
]
Morello, A.
[1
]
Dzurak, A. S.
[1
]
机构:
[1] Univ New S Wales, Sch Elect Engn & Telecommun, Ctr Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia
[2] Keio Univ, Sch Fundamental Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
来源:
基金:
澳大利亚研究理事会;
关键词:
QUANTUM-DOT;
ELECTRON-SPIN;
QUBIT;
ENTANGLEMENT;
OSCILLATIONS;
COMPUTATION;
FIDELITY;
D O I:
10.1038/nature15263
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Quantum computation requires qubits that can be coupled in a scalable manner, together with universal and high-fidelity one-and two-qubit logic gates(1,2). Many physical realizations of qubits exist, including single photons(3), trapped ions(4), superconducting circuits(5), single defects or atoms in diamond(6,7) and silicon(8), and semiconductor quantum dots(9), with single-qubit fidelities that exceed the stringent thresholds required for fault-tolerant quantum computing(10). Despite this, high-fidelity two-qubit gates in the solid state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits(5), owing to the difficulties of coupling qubits and dephasing in semiconductor systems(11-13). Here we present a two-qubit logic gate, which uses single spins in isotopically enriched silicon(14) and is realized by performing single-and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the Loss-DiVincenzo proposal(2). We realize CNOT gates via controlled-phase operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is used in the two-qubit controlled-phase gate. By independently reading out both qubits, we measure clear anticorrelations in the two-spin probabilities of the CNOT gate.
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页码:410 / 414
页数:5
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