1.54 μm emission of pulsed-laser deposited Er-doped films on Si

被引：0
|
作者：
Lanzerstorfer, S [1 ]
Pedarnig, JD [1 ]
Gunasekaran, RA [1 ]
Bäuerle, D [1 ]
Jantsch, W [1 ]
机构：
[1] Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria
来源：
LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS | 1999年 / 77卷
关键词：
thin film; pulsed-laser deposition; photoluminescence; erbium; SiO2 : Er;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the photoluminescence properties of Er-doped SiO2 and glass films fabricated by pulsed-laser deposition (PLD) for different deposition parameters and erbium host materials. The luminescence yield of SiO2 :Er films increases strongly with increasing oxygen background pressure during laser ablation. We compare SiO2 and soda-lime glass as host materials for erbium ions. Under identical growth conditions and the same erbium concentrations in both targets, films deposited from the soda-lime glass show a much higher luminescence yield. This enhancement is attributed to a higher concentration of optically active erbium in the multicomponent glass environment. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：353 / 356
页数：4
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