Interpreting mid-wave infrared MWIR HgCdTe photodetectors

被引：18
|
作者：
Tennant, W. E. [1 ]
机构：
[1] Teledyne Imaging Sensors, Camarillo, CA 93012 USA
来源：
PROGRESS IN QUANTUM ELECTRONICS | 2012年 / 36卷 / 2-3期
关键词：
MWIR HgCdTe photodiodes; Infrared photodiode performance; Fundamental materials limits; RECOMBINATION; TEMPERATURE;
D O I：
10.1016/j.pquantelec.2012.05.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper analyses the electro-optical behavior of simple, near-optimal MWIR HgCdTe photodiodes. These devices operate near fundamental materials limits making them both excellent in quality and ideal for understanding the most basic aspects of infrared photodiode performance. Measurements of representative diodes are explained by models that are simple but still accurate in describing optical and electrical properties. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：273 / 292
页数：20
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