In situ atomic-scale analysis of Rayleigh instability in ultrathin gold nanowires

被引:55
|
作者
Xu, Shang [1 ]
Li, Peifeng [1 ,2 ]
Lu, Yang [1 ,3 ]
机构
[1] City Univ Hong Kong, Dept Mech & Biomed Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
[2] Zhejiang Univ, Inst Appl Mech, Hangzhou 310027, Zhejiang, Peoples R China
[3] Natl Precious Met Mat Engn Res Ctr NPMM, Hong Kong Branch, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
ultrathin gold nanowire; in situ transmission electron microscopy (TEM); Rayleigh instability; thermal instability; interconnect; LARGE-STRAIN PLASTICITY; AU NANOWIRES; MORPHOLOGICAL-CHANGES; SURFACE-DIFFUSION; TRANSPARENT; CAPILLARITY; TRANSPORT; NANOPARTICLES; CONDUCTANCE; DEPOSITION;
D O I
10.1007/s12274-017-1667-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Comprehensive understanding of the structural/morphology stability of ultrathin (diameter < 10 nm) gold nanowires under real service conditions (such as under Joule heating) is a prerequisite for the reliable implementation of these emerging building blocks into functional nanoelectronics and mechatronics systems. Here, by using the in situ transmission electron microscopy (TEM) technique, we discovered that the Rayleigh instability phenomenon exists in ultrathin gold nanowires upon moderate heating. Through the controlled electron beam irradiation-induced heating mechanism (with < 100 degrees C temperature rise), we further quantified the effect of electron beam intensity and its dependence on Rayleigh instability in altering the geometry and morphology of the ultrathin gold nanowires. Moreover, in situ high-resolution TEM (HRTEM) observations revealed surface atomic diffusion process to be the dominating mechanism for the morphology evolution processes. Our results, with unprecedented details on the atomic-scale picture of Rayleigh instability and its underlying physics, provide critical insights on the thermal/structural stability of gold nanostructures down to a sub-10 nm level, which may pave the way for their interconnect applications in future ultra-large-scale integrated circuits.
引用
收藏
页码:625 / 632
页数:8
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