INVESTIGATION OF Cu(In, Ga)Se2 FILMS FABRICATED BY ONE-STEP ELECTRODEPOSITION

被引：0
|
作者：
Chen, Hsiang [1 ]
Yeh, Yih Min [2 ]
Huang, Sheng Ting [1 ]
Yeh, Wen Jin [2 ]
机构：
[1] Natl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Puli, Taiwan
[2] WuFeng Univ, Grad Sch Optomechatron & Mat, Chiayi, Taiwan
来源：
CHALCOGENIDE LETTERS | 2013年 / 10卷 / 07期
关键词：
one-step; electrodeposition; Cu(In; Ga)Se-2; thin film solar cell; annealing; SOLAR-CELLS;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, CIGS thin films were fabricated on an ITO substrate by one-step electrodeposition with different conditions. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM), and energy-dispersive X-ray spectroscopy (EDS). In addition, we annealed the as-deposited thin film at 200-350 degrees C for 30 min and then analyzed the crystalline structure and material morphology of the annealed films to observe the effects of annealing on the film composition.
引用
收藏
页码：229 / 238
页数：10
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