Structural and optical in-plane anisotropy of m-plane GaN3

被引：1

作者：

Wu Chao ^{[1
]}

Xie Zi-Li ^{[1
]}

Zhang Rong ^{[1
]}

Zhang Zeng ^{[1
]}

Liu Bin ^{[1
]}

Li Yi ^{[1
]}

Fu De-Yi ^{[1
]}

Xiu Xiang-Qian ^{[1
]}

Han Ping ^{[1
]}

Shi Yi ^{[1
]}

Zheng You-Dou ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

来源：

ACTA PHYSICA SINICA | 2008年 / 57卷 / 11期

关键词：

m-plane GaN; structural anisotropy; polarized photoluminescence;

D O I：

10.7498/aps.57.7190

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The m-plane GaN film is grown on LiAlO2 by metal organic chemical vapor deposition. The single crystal orientation of m-plane GaN is demonstrated, According to the X-ray diffraction results, and the anisotropy strain is calculated. X-ray rocking curve at different 9 angle shows obvious in plane structural anisotropy. Polarized photoluminescence is employed for the investigation of optical anisotropy. Both the wavelength and the intensity for the emission peak near band edge vary with the rotation of polarization angle, and can be explained by the degeneration of the subbands in valence band under anisotropy strain.

引用

页码：7190 / 7193

页数：4

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