Ku-band high power internally matched GaN HEMTs with 1.5 GHz bandwidth

被引:1
|
作者
Ge, Qin [1 ]
Liu, Xinyu [1 ]
Chen, Xiaojuan [1 ]
Luo, Weijun [1 ]
Liu, Guoguo [1 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R China
关键词
Bandwidths; Power transistors; Ku-band; Compensated matching; Flat power; AMPLIFIER;
D O I
10.1108/13565361311298196
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Purpose - The purpose of this paper is to report upon high power, internally matched GaN high electron mobility transistors (HEMTs) at Ku band with 1.5 GHz bandwidth, which employ a simple and cost-effective lossless compensated matching technique. Design/methodology/approach - Two 4 mm gate periphery GaN HEMTs are parallel combined and internally matched with multi-section reactive impedance transformers at the input and output networks. The output matching network is designed at the upper frequency of the design band for a flat power of the circuit, while the input matching network is designed at the upper frequency for a flat gain. Findings - With the reactively compensated matching technique, the internally matched GaN HEMTs exhibit a flat saturated output power of 43.2 + 0.7 dBm and an average power added efficiency of 15 per cent over 12 to 13.5 GHz. Originality/value - This paper provides useful information for the internally matched GaN HEMTs.
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页码:19 / 23
页数:5
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