Bandwidths;
Power transistors;
Ku-band;
Compensated matching;
Flat power;
AMPLIFIER;
D O I:
10.1108/13565361311298196
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Purpose - The purpose of this paper is to report upon high power, internally matched GaN high electron mobility transistors (HEMTs) at Ku band with 1.5 GHz bandwidth, which employ a simple and cost-effective lossless compensated matching technique. Design/methodology/approach - Two 4 mm gate periphery GaN HEMTs are parallel combined and internally matched with multi-section reactive impedance transformers at the input and output networks. The output matching network is designed at the upper frequency of the design band for a flat power of the circuit, while the input matching network is designed at the upper frequency for a flat gain. Findings - With the reactively compensated matching technique, the internally matched GaN HEMTs exhibit a flat saturated output power of 43.2 + 0.7 dBm and an average power added efficiency of 15 per cent over 12 to 13.5 GHz. Originality/value - This paper provides useful information for the internally matched GaN HEMTs.