Modelling and optimizing of high sensitivity semiconducting thermistors at low temperature

被引：7
|
作者：
Piat, M
Torre, JP
Beeman, JW
Lamarre, JM
Bhatia, RS
机构：
[1] Univ Paris 11, Inst Astrophys Spatiale, F-91405 Orsay, France
[2] CNRS, Serv Aeron, F-91371 Verrieres Le Buisson, France
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[4] CALTECH, Pasadena, CA 91125 USA
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 2001年 / 125卷 / 5-6期
关键词：
D O I：
10.1023/A:1012911722522
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have modelled low temperature semiconducting thermometers by using a semi-analytical approach of Anderson insulators, taking into account both the electrical field and the electron/phonon decoupling effects. We first used this simulation to fit measured V(I) curves to validate this method and to obtain physical parameters of NTD Ge and NbSi thin film samples around 100 mK. We show that considering the two effects separately leads to an overestimate of each one. Once validated, our algorithm was used to optimise the design of high sensitivity thermometers for the High Frequency Instrument (HFI) of the Planck satellite.
引用
收藏
页码：189 / 203
页数：15
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