A 500 MHz carbon nanotube transistor oscillator

被引：25

作者：

Pesetski, A. A. ^{[1
]}

Baumgardner, J. E. ^{[1
]}

Krishnaswamy, S. V. ^{[1
]}

Zhang, H. ^{[1
]}

Adam, J. D. ^{[1
]}

Kocabas, C. ^{[2
]}

Banks, T. ^{[2
]}

Rogers, J. A. ^{[2
]}

机构：

[1] Northrop Grumman Elect Syst, Linthicum, MD 21090 USA

[2] Univ Illinois, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2988824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz. (C) 2008 American Institute of Physics.

引用

页数：2

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