Electronic states in the antiferromagnetic phase of electron-doped high-Tc cuprates -: art. no. 212505

被引：13

作者：

Tohyama, T ^{[1
]}

Maekawa, S ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.87.212505

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the electronic states in the antiferromagnetic (AF) phase of electron-doped cuprates by using numerically exact diagonalization technique for a t-t'-t"-J model. When AF correlation develops with decreasing temperature, a gaplike behavior emerges in the optical conductivity. Simultaneously, the coherent motion of carriers due to the same sublattice hoppings is enhanced. We propose that the phase is characterized as an AF state with small Fermi surface around the momentum k= (pi ,0) and (0,pi). This is a remarkable contrast to the behavior of hole-doped cuprates.

引用

页数：4

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