Stress generation in PECVD silicon nitride thin films for microelectronics applications

被引：0

作者：

Belyansky, M ^{[1
]}

Klymko, N ^{[1
]}

Madan, A ^{[1
]}

Mallikarjunan, A ^{[1
]}

Li, Y ^{[1
]}

Chakravarti, A ^{[1
]}

Deshpande, S ^{[1
]}

Domenicucci, A ^{[1
]}

Bedell, S ^{[1
]}

Adams, E ^{[1
]}

Coffin, J ^{[1
]}

Tai, L ^{[1
]}

Sun, SP ^{[1
]}

Widodo, J ^{[1
]}

Lai, CW ^{[1
]}

机构：

[1] IBM Semicond R&D Ctr, Hopewell Jct, NY 12533 USA

来源：

THIN FILMS STRESSES AND MECHANICAL PROPERTIES XI | 2005年 / 875卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin SiN films deposited by plasma enhanced chemical vapor deposition (PECVD) have been analyzed by a variety of analytical techniques including Fourier Transform Infrared Spectroscopy (FTIR), X-ray reflectivity (XRR), and Rutherford Backscattering Spectrometry/Hydrogen Forward Scattering (RBS/HFS) to collect data on bonding, density and chemical composition respectively. Both tensile and compressive SiN films have been deposited and analyzed. Mechanisms of stress formation in SiN thin films are discussed. It has been found that amount of bonded hydrogen as detected by FTIR is higher for compressive films compared to tensile SiN films. Amount of bonded hydrogen in a film is correlated well with tensile stress. Effect of deposition temperature and other process parameters on stress have been studied. Exposure of SiN films to elevated temperature after deposition lead to increase in tension and degradation in compressive stress. New approaches to stress generation in thin films like creation of multilayer film structures have been delineated.

引用

页码：325 / 330

页数：6

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