Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi4Ti4O15
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作者:
Peng, Dengfeng
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Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Natl Inst Adv Ind Sci & Technol, Tosu, Saga 8410052, JapanTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Peng, Dengfeng
[1
,2
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Zou, Hua
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Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Zou, Hua
[1
]
Xu, Chaonan
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Natl Inst Adv Ind Sci & Technol, Tosu, Saga 8410052, JapanTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Xu, Chaonan
[2
]
Wang, Xusheng
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Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Wang, Xusheng
[1
]
Yao, Xi
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Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Yao, Xi
[1
]
Lin, Jian
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Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Lin, Jian
[3
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Sun, Tiantuo
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Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Sun, Tiantuo
[3
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机构:
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Natl Inst Adv Ind Sci & Technol, Tosu, Saga 8410052, Japan
[3] Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
Er3+ doped SrBi4Ti4O15 (SBT) bismuth layered-structure ferroelectric ceramics were synthesized by the traditional solid-state method, and their upconversion photoluminescent (UC) properties were investigated as a function of Er3+ concentration and incident pump power. Green (555 nm) and red (670 nm) emission bands were obtained under 980 nm excitation at room temperature, which corresponded to the radiative transitions from S-4(3/2), and F-4(9/2) to I-4(15/2), respectively. The emission color of the samples could be changed with moderating the doping concentrations. The dependence of UC intensity on pumping power indicated a two-photon emission process. Studies on dielectric properties indicated that the introduction of Er increased the ferroelectric-paraelectric phase transition temperature (Tc) of SBT, thus making this ceramic suitable for piezoelectric sensor applications at higher temperatures. Piezoelectric measurement showed that the doped SBT had a relative higher piezoelectric constant d(33) compared with the non-doped ceramics. The thermal annealing behaviors of the doped sample revealed a stable piezoelectric property. The doped SBT showed bright UC emission while simultaneously having increased Tc and d(33). As a multifunctional material, Er doped SBT ferroelectric oxide showed great potential in application of sensor, future optical-electro integration and coupling devices. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4773318]
机构:
Wuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
Hao, Hua
Liu, Han-Xing
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Wuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
Liu, Han-Xing
Min, Xin-Min
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
Min, Xin-Min
Ouyang, Shi-Xi
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
机构:
Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, IndiaOsmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
Ramulu, NV
Aparna, M
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Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, IndiaOsmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
Aparna, M
Prasad, G
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Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, IndiaOsmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
Prasad, G
Kumar, GS
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Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, IndiaOsmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
Kumar, GS
Sankaram, TB
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Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, IndiaOsmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India