Germanium-Tin Heterojunction Phototransistor: Towards High-Efficiency Low-Power Photodetection in Short-Wave Infrared Range

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作者
Wang, Wei [1 ]
Dong, Yuan [1 ]
Lee, Shuh Ying [2 ]
Loke, Wan Khai [2 ]
Gong, Xiao [1 ]
Yoon, Soon-Fatt [2 ]
Liang, Gengchiau [1 ]
Yeo, Yee-Chia [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
摘要
We report the world's first demonstration of Germanium-Tin (Ge1-xSnx) heterojunction phototransistor (HPT) for high-efficient low-power light detection in short-wave infrared (SWIR) range. Large optical response enhancement of similar to 10 times over the conventional p-i-n Ge1-xSnx photodiode (PD) was achieved, with photodetection beyond 2003 nm. High responsivities of similar to 2.6 A/W at 1510 nm and similar to 0.19 A/W at 1877 nm were achieved at a low operating bias of 1.0 V.
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