Magnesium film implanted with vanadium ions for hydrogen storage

被引：2
|
作者：
Leon, A [1 ]
Knystautas, EJ [1 ]
Huot, J [1 ]
Schulz, R [1 ]
机构：
[1] Univ Laval, Dept Phys, Ste Foy, PQ G1K 7P4, Canada
来源：
ENGINEERING THIN FILMS WITH ION BEAMS, NANOSCALE DIAGNOSTICS, AND MOLECULAR MANUFACTURING | 2001年 / 4468卷
关键词：
magnesium film; hydrogen storage; ion implantation;
D O I：
10.1117/12.452545
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Preliminary results on the hydrogenation characteristics of vanadium-implanted magnesium films are presented. Magnesium films were prepared by vacuum evaporation. Some of them were then implanted with vanadium in order to improve their kinetics and lower the temperature of operation. The structural and hydrogen sorption properties of pure magnesium as well as ion-implanted magnesium films are described. The effects of vanadium ion implantation on hydrogen diffusion will be discussed.
引用
收藏
页码：105 / 111
页数：3
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