A unified analytical continuous current model applicable to accumulation mode (junctionless) and inversion mode MOSFETs with symmetric and asymmetric double-gate structures

被引：51
|
作者：
Jin, Xiaoshi [1 ]
Liu, Xi [1 ]
Wu, Meile [1 ]
Chuai, Rongyan [1 ]
Lee, Jung-Hee [2 ]
Lee, Jong-Ho [3 ,4 ]
机构：
[1] Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
[2] Kyungpook Natl Univ, Sch EECS, Taegu 702701, South Korea
[3] Seoul Natl Univ, Sch EECS Engn, Seoul 151742, South Korea
[4] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
来源：
SOLID-STATE ELECTRONICS | 2013年 / 79卷
关键词：
Junctionless; Double-gate; MOSFETs; Modeling; TRANSISTORS;
D O I：
10.1016/j.sse.2012.08.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A unified analytical continuous model, based on an approximate solution of Poisson's equation, is proposed for the current-voltage (I-V) characteristics of accumulation mode (junctionless FETs) and conventional inversion mode MOSFETs which have symmetric and asymmetric double-gate structures. As a unified model, it is applicable to both junctionless and conventional double-gate (DG) MOSFETs and also represents the I-V characteristics of the MOSFETs with symmetric and asymmetric cases. The model with symmetric and asymmetric gates accounts for body doping, body thickness, and front-gate and back-gate oxide thicknesses. The model is verified by comparing with TCAD simulation results and shows a good agreement. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：206 / 209
页数：4
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