MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells

被引：2

作者：

Klimko, G. V. ^{[1
]}

Komissarova, T. A. ^{[1
]}

Sorokin, S. V. ^{[1
]}

Kontrosh, E. V. ^{[1
]}

Lebedeva, N. M. ^{[1
]}

Usikova, A. A. ^{[1
]}

Il'inskaya, N. D. ^{[1
]}

Kalinovskii, V. S. ^{[1
]}

Ivanov, S. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 09期

关键词：

MOLECULAR-BEAM EPITAXY; GAAS;

D O I：

10.1134/S1063785015090229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of optimization of the design and molecular beam epitaxy (MBE) growth technology of N-AlGaAs:Si/n (+)-GaAs:Si/p (+)-GaAs:Be/P-AlGaAs:Be heterostructures for tunnel diodes (TDs). The achieved maximum peak current density level (J (p) = 513 A/cm(2)) allows these TDs to be used for cascade connections both in multijunction solar cells and in structures of tunnel-coupled laser diodes. The initial region of the J-U curve of TDs exhibits nonlinearity that is explained by a residual potential barrier left in the p (+)-P-p (+) isotype heterojunction (confining the active region of TD) as a result of non-optimum doping of Al0.4Ga0.6As alloy.

引用

页码：905 / 908

页数：4

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