Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

被引：15

作者：

Naresh-Kumar, G. ^{[1
]}

Mauder, C. ^{[2
,3
]}

Wang, K. R. ^{[4
]}

Kraeusel, S. ^{[1
]}

Bruckbauer, J. ^{[1
]}

Edwards, P. R. ^{[1
]}

Hourahine, B. ^{[1
]}

Kalisch, H. ^{[2
]}

Vescan, A. ^{[2
]}

Giesen, C. ^{[3
]}

Heuken, M. ^{[2
,3
]}

Trampert, A. ^{[4
]}

Day, A. P. ^{[5
]}

Trager-Cowan, C. ^{[1
]}

机构：

[1] Univ Strathclyde, Dept Phys, SUPA, Glasgow G4 0NG, Lanark, Scotland

[2] Rhein Westfal TH Aachen, GaN Device Technol, D-52074 Aachen, Germany

[3] AIXTRON SE, D-52134 Herzogenrath, Germany

[4] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[5] Aunt Daisy Sci Ltd, Lydney GL15 5DX, Glos, England

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 14期

基金：

英国工程与自然科学研究理事会;

关键词：

LIGHT-EMITTING-DIODES; M-PLANE GAN; STACKING-FAULTS; LASER-DIODES; VIEW IMAGE; DISLOCATIONS; SEMICONDUCTORS; DIFFRACTION; DEFECTS; BLUE;

D O I：

10.1063/1.4801469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on gamma-LiAlO2 by metal organic vapor phase epitaxy. (C) 2013 AIP Publishing LLC.

引用

页数：4

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