Structure characterization of W-doped vanadium oxide thin films prepared by reactive magnetron sputtering

被引:0
|
作者
Chen, Shuang [1 ]
Zhang, Lifang [1 ]
Xiao, Shujuan [1 ]
Dong, Cuizhi [1 ]
机构
[1] Hebei United Univ, Qinggong Coll, Tangshan, Peoples R China
关键词
Magnetron sputtering; Tungsten doping; Vanadium oxide; Thin films; VO2;
D O I
10.4028/www.scientific.net/AMR.690-693.1694
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
W-doped Vanadium oxide thin films were prepared on the substrates of SiO2 glass, float glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure, morphology and phase transition were characterized by X-ray diffractometer, atomic force microscopy(AFM) and differential thermal analysis(DTA), respectively. The results show that, the major phase of W-doped films on SiO2 glass is VO2.Dopant reduce the phase transition temperature of VO2 thin films to 21.9 degrees C. The root-mean-square roughness of the film increase for the longer deposition time.
引用
收藏
页码:1694 / 1697
页数:4
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