Facile fabrication of suspended as-grown carbon nanotube devices

被引：26
|
作者：
Sangwan, V. K. [1 ,2 ]
Ballarotto, V. W. [2 ]
Fuhrer, M. S. [1 ]
Williams, E. D. [1 ,2 ]
机构：
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[2] Lab Phys Sci, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 11期
关键词：
D O I：
10.1063/1.2987457
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooge's constant of the suspended CNT-FETs (2.6 x 10(-3)) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10(-2)). (C) 2008 American Institute of Physics.
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页数：3
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