Structural evolution, low-firing characteristic and microwave dielectric properties of magnesium and sodium vanadate ceramic

被引:15
|
作者
Gong, Jianzhang [1 ]
Zhou, Huanfu [1 ]
He, Fen [1 ]
Chen, Xiuli [1 ]
Chen, Jie [1 ]
Fang, Liang [1 ]
机构
[1] Guilin Univ Technol, Key Lab Nonferrous Mat & New Proc Technol, State Key Lab Breeding Base Nonferrous Met & Spec, Minist Educ,Coll Mat Sci & Engn, Guilin 541004, Peoples R China
基金
中国国家自然科学基金;
关键词
Dielectric properties; Low-firing vanadate compounds; Ceramics; Microstructure; X-ray diffraction; CRYSTAL-STRUCTURE;
D O I
10.1016/j.ceramint.2015.05.060
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A low-firing microwave dielectric ceramic with the composition of NaMg4V3O12 was prepared by a solid state reaction method. NaMg4V3O12 ceramic could be indexed as a tetragonal phase and the unit cell parameters were calculated as a=b=6.894 angstrom, c=19.308 angstrom. Room temperature X-ray diffraction data shown that the ceramic displayed an obvious peak variations. After sintered at 830 degrees C for 4 h, the ceramic could be well densified and exhibited good microwave dielectric properties with a relative dielectric constant (epsilon(r)) of 9.53, quality factor (Q x f) of 32,820 GHz (at similar to 11 GHz), and temperature coefficient of resonator frequency (tau(f)) of -90 ppm/degrees C. With increasing the sintering temperatures, the curve of the relative dielectric constant exhibits a similar trend to that of the relative density. The Q x f values were related to the average grain size. Due to the decline of the average grain size, the Q x f values decrease above 830 degrees C. The variation of tau(f) values was attributed to microstructure variations with increasing the sintering temperatures. Moreover, an X-ray photoelectron spectroscopic analysis illustrated that the mass percentages of vanadium element in the sample (sintered at 830 degrees C) are 96.34% for vanadium (V) and 3.66% for vanadium (IV). (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:11125 / 11131
页数:7
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