Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect

Latch based extended-gate field effect transistors (EGFETs) with a high on/off current ratio were realized on the fully depleted silicon-on-insulator (SOI) substrate. A large on/off current ratio characteristic as high as 10(4) with a very steep subthreshold swing close to 0 mV/dec was achieved by using the latch characteristic of the SOI substrate, which means it is highly sensitive to the small surface potential variation of biomaterials. Therefore, latch based EGFET sensors are a very promising candidate to break through the poor signal to the noise ratio exposed on conventional biosensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757000]