Selective domain wall depinning by localized Oersted fields and Joule heating

被引:18
|
作者
Ilgaz, Dennis [1 ]
Klaeui, Mathias [1 ,3 ]
Heyne, Lutz [1 ]
Boulle, Olivier [1 ]
Zinser, Fabian [1 ]
Krzyk, Stephen [1 ]
Fonin, Mikhail [1 ]
Ruediger, Ulrich [1 ]
Backes, Dirk [1 ,2 ,4 ]
Heyderman, Laura J. [2 ]
机构
[1] Univ Konstanz, Fachbereich Phys, D-78457 Constance, Germany
[2] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
[3] Univ Konstanz, Zukunftskolleg, D-7750 Constance, Germany
[4] Univ Konstanz, Fachbereich Phys, D-78457 Constance, Germany
关键词
D O I
10.1063/1.2990629
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using low temperature magnetoresistance measurements, the possibility to selectively move a domain wall locally by applying current pulses through a Au nanowire adjacent to a permalloy element is studied. We find that the domain wall depinning field is drastically modified with increasing current density due to the Joule heating and the Oersted field of the current, and controlled motion due to the Oersted field without any externally applied fields is achieved. By placing the domain wall at various distances from the Au wire, we determine the range of the Joule heating and the Oersted field and both effects can be separated. (C) 2008 American Institute of Physics.
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页数:3
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