Effects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO:Mn thin film

被引：4

作者：

Yang Tian-Yong ^{[1
]}

Kong Chun-Yang ^{[1
]}

Ruan Hai-Bo ^{[2
]}

Qin Guo-Ping ^{[1
,2
]}

Li Wan-Jun ^{[1
,2
]}

Liang Wei-Wei ^{[1
]}

Meng Xiang-Dan ^{[1
]}

Zhao Yong-Hong ^{[1
]}

Fang Liang ^{[2
]}

Cui Yu-Ting ^{[1
]}

机构：

[1] Key Lab Optoelect Funct Mat Chongqing, Chongqing 400047, Peoples R China

[2] Chongqing Univ, Coll Phys, Chongqing 400030, Peoples R China

来源：

ACTA PHYSICA SINICA | 2012年 / 61卷 / 16期

关键词：

ZnO:Mn thin films; ion-implantation; crystal structure; room-temperature ferromagnetism; RAMAN-SCATTERING; MN; ACTIVATION; MODES;

D O I：

10.7498/aps.61.168101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Mn-N codoped ZnO thin films are fabricated on quartz glass substrates using the radio-frequency magnetron sputtering technique together with the direct N+ ion-implantation. The effects of annealing temperature on microstructure and room-temperature ferromagnetism of the thin films are investigated. The results indicate that both divalent Mn2+ and trivalent N3- ions are incorporated into ZnO lattice. As the annealing temperature increases, the lattice distortion induced by N+ ion-implantation can decrease, and the N3- may escape from the film, which results in the reducing of acceptor (N-O) concentration. Ferromagnetism is observed in the (Mn,N)-codoped ZnO thin film at 300 K and found to be the sensitive to the acceptor concentration. The mechanism of room-temperature ferromagnetism in the ZnO:(Mn,N) is discussed based on the bound magnetic polaron model.

引用

页数：7

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