Effect of In-doping on the optical constants of ZnO thin films

被引:61
|
作者
Xie, G. C. [1 ]
Fang, L. [1 ,2 ]
Peng, L. P. [1 ,2 ]
Liu, G. B. [1 ]
Ruan, H. B. [1 ]
Wu, F. [1 ]
Kong, C. Y. [3 ]
机构
[1] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
[2] Chongqing Univ, Educ Minist China, Key Lab Optoelect Technol & S, Chongqing 400044, Peoples R China
[3] Chongqing Normal Univ, Dept Appl phys, Chongqing 400030, Peoples R China
关键词
ZnO thin films; In doping; Magnetron sputtering; optical constants; refractive index; Swanepoel method; SOL-GEL TECHNIQUE; SPRAY-PYROLYSIS; CHEMICAL SPRAY; THICKNESS; TEMPERATURE;
D O I
10.1016/j.phpro.2012.03.614
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Highly transparent and conductive Indium-doped ZnO (ZnO: In) thin films with different In content were deposited on quartz glass slides by RF magnetron sputtering at room temperature. The thickness and the optical constants of the films were obtained by the Swanepoel method, and the effects of In concentration on the optical constants were investigated. Calculated results show that both the refractive index and optical band gap first increase then decreases with In concentration increasing in the visible region, and the variation of both epsilon(r) and epsilon(i) with wavelength follows the same trend as that of refractive index and extinction coefficient, respectively. (C) 2012 Published by Elsevier B.V. Selection and/or peer review under responsibility of Chinese Vacuum Society (CVS).
引用
收藏
页码:651 / 657
页数:7
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