An Electrothermal Model of Interconnects Based on a Transmission-line Network

被引:0
|
作者
Shao, Yan [1 ]
Li, Xiao Chun [1 ]
Mao, Jun Fa [1 ]
机构
[1] Shanghai Jiao Tong Univ, Dept Elect Engn, Key Lab, Minist Educ Res Design, Shanghai 200240, Peoples R China
来源
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012) | 2012年
关键词
Circuit reliability; CMOS integrated circuits; electrothermal effects; temperature; transmission lines; TRANSIENTS;
D O I
暂无
中图分类号
TN [电子技术、通信技术];
学科分类号
0809 ;
摘要
In this paper, an electrothermal model is proposed for transient analysis of interconnects on CMOS integrated circuits excited by electrostatic discharge pulse. A thermal transmission-line network is established to model the thermal conduction in interconnect structure. The exact input impedance of the thermal network is obtained and then inverse fast Fourier transformation is used to predict transient thermal responses of interconnects. An iterative process is developed to include electrothermal effects that positive feedback occurs between the electrical and thermal behaviours of interconnects, which can impact the performance and reliability of circuits. It is shown that interconnect temperature and resistance will be underestimated if electrothermal effects and transmission line effects are ignored. Numerical results show that the proposed model is much more efficient at the cost of less than 1% error compared with thermal solver based on finite element method.
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收藏
页码:1274 / 1276
页数:3
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