Polysilicon piezoresistive pressure sensor and its temperature compensation

被引：1
|
作者：
Qu, HW [1 ]
Yao, SY [1 ]
Zhang, R [1 ]
Mao, GR [1 ]
Zhang, WX [1 ]
机构：
[1] Tianjin Univ, Dept Microelect, Tianjin 300072, Peoples R China
来源：
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年
关键词：
polysilicon sensor; temperature shift; sensibility compensation;
D O I：
10.1109/ICSICT.1998.786518
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polysilicon sensor is one of the most prospective pressure sensor because of its good performance at relatively high temperature. In this paper wr put forward a technique to compensate its negative sensibility temperature drift that prohibits its successful utilization in wide range of temperature, The technique is inexpensive and easy to practice in applications.
引用
收藏
页码：914 / 916
页数：3
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