Structural and electrical characteristics of nitrogen-doped nanocrystalline diamond films prepared by CVD

被引：19
|
作者：
Hu, Qiang [2 ]
Hirai, Makoto [1 ]
Joshi, Rakesh K. [2 ]
Kumar, Ashok [1 ,2 ]
机构：
[1] Univ S Florida, Nanomat & Nanomfg Res Ctr, Tampa, FL 33620 USA
[2] Univ S Florida, Dept Mech Engn, Tampa, FL 33620 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 02期
基金：
美国国家科学基金会;
关键词：
THIN-FILMS; CONTACTS; RAMAN;
D O I：
10.1088/0022-3727/42/2/025301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nitrogen-doped nanocrystalline diamond (N-NCD) films were grown using microwave plasma enhanced chemical vapour deposition method. Films were characterized by Raman spectroscopy, x-ray diffraction and scanning electron microscopy. Perfectly ohmic contacts for the N-doped NCD film and p-type Si substrate were obtained using silver (Ag). Silver deposited at a temperature of 250 degrees C with the pulsed laser deposition method was found to show ohmic behaviour with a high degree of reproducibility. Current-voltage (I-V) characteristics are presented for various Ag/N-NCD and Ag-Si. Rectifying I-V behaviour for the interface N-NCD/p-Si suggests that the majority carriers for N-NCD are electrons.
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页数：4
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