Orientation control of β-NaGaO2 thin film: a precursor for β-CuGaO2 as a thin-film solar cell absorber

被引：5

作者：

Suzuki, Issei ^{[1
]}

Tanemura, Masatoshi ^{[2
]}

Omata, Takahisa ^{[3
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Sci, Jovanka Bontschits Str 2, D-64287 Darmstadt, Germany

[2] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan

[3] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2017年 / 125卷 / 12期

关键词：

Thin film; Electron beam evaporation; Ternary wurtzite; Sputtering; Ion exchange; GAP OXIDE SEMICONDUCTOR; VAPORIZATION; TEMPERATURE; EVAPORATION; SYSTEMATICS;

D O I：

10.2109/jcersj2.17157

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The beta-NaGaO2 thin film is a precursor film for the fabrication of a beta-CuGaO2 thin film by ion exchange, which is expected to be applicable to a thin film solar cell. The beta-NaGaO2 thin films were fabricated by electron beam evaporation, and they showed substrate dependence of the crystal orientation, which is in contrast to the recently reported beta-NaGaO2 films obtained by sputtering that exhibited no substrate dependence. The difference observed for evaporation and sputtering was discussed based on the kinetic energy of the particles impinging on the substrate during the deposition. An appropriate orientation of the beta-NaGaO2 film for ion exchange was discussed in terms of the in-plane shrinkage generated during the ion exchange from beta-NaGaO2 to -CuGaO2. (c) 2017 The Ceramic Society of Japan. All rights reserved.

引用

页码：872 / 875

页数：4

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