A simulation model for understanding the charge transport and recombination behavior in PLZT based ferroelectric photovoltaic devices

We present a simulation model for ferroelectric lanthanum doped lead zirconate titanate thin film based photovoltaic devices using a semiconducting thin-film optics simulation (SETFOS) software. The model was designed by analyzing the dependence of photovoltaic characteristics (J(sc) and V-oc), charge carrier (electron and hole) concentration, current density, and recombination distribution on parameters such as the thickness of the interface layer and the top electrode, and the work function of the top electrode. The optimized parameters were used to obtain current-voltage curves of the simulated device. These simulated results fit with the current-voltage curves of the experimentally fabricated device, validating our model. The model is helpful in understanding the physical processes such as transport and recombination of charge carriers in PV devices that are essential for improving the photovoltaic performance.