Development of ZnTe layers using an electrochemical technique for applications in thin-film solar cells

被引:30
|
作者
Fauzi, F. [1 ]
Diso, D. G. [1 ]
Echendu, O. K. [1 ]
Patel, V. [1 ]
Purandare, Y. [1 ]
Burton, R. [1 ]
Dharmadasa, I. M. [1 ]
机构
[1] Sheffield Hallam Univ, Elect Mat & Sensors Grp, Mat & Engn Res Inst, Sheffield S1 1WB, S Yorkshire, England
关键词
VAPOR-PHASE EPITAXY; N-TYPE; ELECTRODEPOSITION; GROWTH; DEPOSITION; TELLURIDE; DEVICES; TE;
D O I
10.1088/0268-1242/28/4/045005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zinc telluride layers were grown by an electrochemical technique using acidic and aqueous solutions containing ZnCl2 and TeO2. The layers were deposited on glass/fluorine-doped tin oxide substrates using a two-electrode system. The deposited ZnTe layers were characterized using x-ray diffraction, x-ray fluorescence, Raman spectroscopy, optical absorption, photoelectrochemical cell measurements, scanning electron microscopy and 3D-atomic force microscopy (3D-AFM) for the structural, optical, electrical and morphological properties. The electrodeposited ZnTe layers grow as columns, and have cubic crystal structure, the band gap in the range of (2.00-2.20) eV and p-type electrical conductivity. Surface morphology studies using SEM indicate the presence of two types of material clusters varying in size up to similar to 125 nm. 3D-AFM studies with higher magnification show that the material tends to grow as columns with different sizes leaving gaps in between in some areas.
引用
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页数:10
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