Correction for the C-V curve of Au/GeO2/Ge MOS structure

The energy band structure of GeO2/Ge system giving maximum photoconduction current was investigated by use of the C-V curves. this system, its high acceptor concentration made the capacitance change with V very small (less than 2%) and the analysis difficult. Therefore, the high frequency C-V curve intrinsic to the MOS system was calculated by removing additional effects. Through the analysis of the corrected C-V curve, the Fermi level of Ge in the system was determined to be 0.29 eV below the intrinsic level and the maximum depletion layer width to be 32.5 nm. Moreover, a comparison with the theoretical C-V curve revealed that the interface traps are uniformly distributed along the energy gap and their density is of the order of 10(13) cm(-2) eV(-1).